Welcome to the web page of the WIDE BANDGAP SEMICONDUCTOR group at the Center for Superconductivity Research (CSR), University of Maryland (UMD), College Park, Maryland. Our research interests are;

People

Dr.R.D.Vispute, Senior Research Scientist
Dr.S.S. Hullavarad, Faculty Research Assistant
Dr.S.N.Yedave, Faculty Research Assistant
Ms.Betsy Pugel, Graduate Student
Mr.Evan Jones, Undergraduate student

Our research activity at the CSR is driven by the active collaboration efforts between Army Research Laboratory (ARL) under the Power Electronics and Energy Research (PEER) Program supported by ARL, and Industry Academia Collaboration supported by National Science Foundation (NSF), and Maryland Industrial Partnerships (MIPS).

The UMD-ARL-PEER program has multiple goals of achieving high technology standards to cater the needs of US Army research and educational outreach with aim of training talented US undergraduate/graduate students and offer them a unique educational opportunity, encourage them to pursue higher studies and thus fuel the research engine of this nation. For details click on following link: www.ece.umd.edu/MERIT/

High Temperature Compatible Capping of SiC for dopant activation

The activation of dopants in SiC is a major technological challenge, and needs to be annealed at 1600 ⁰C and above temperatures to get the carriers activated for the device operation. The major concern is the non-stoichiometry of the SiC surface after annealing and hence the need of non-reative capping layer that protects the SiC surface, and can be easily removed after the annealing step. We have developed AlN based capping layer for 1600⁰C annealing process. The SiC junction diode is shown after annealing at 1600⁰C in conventional SiH₄ capped process which leaves the rough surface. On the other hand AlN capped device has the smooth coverage. We have developed multi-layer AlN/BN capping materials that will enable the process up to 1700⁰C that can be completely etched of chemically after the process.

AlN based planar and side wall dielectric for SiC based devices

Our current research activities under this program are focused on the development of dielectrics for SiC devices, related processing and device fabrication to achieve ARL's goals on the power electronics. The major goal is to demonstrate high temperature power devices such as, power diodes, switches, and motor drive electronics that will operate for 10,000 hours at junction temperatures of 300°C and above.

AlN has been developed as the high temperature dielectric with the high breakdown strength and low leakage current layer on SiC based MIS deice. We also optimized the AlN covering on the side walls of the vertical SiC based device.

Low Leakage AlN/SiC M-I-S structure AlN Passivation on SiC based device

AlN MEMS and NEMS Resonators for RF Communications

Advanced commercial systems need a wide range of microelectromechanical systems (MEMS) and related technologies for a variety of operations in harsh environment such as high temperatures, intense vibrations, erosive flow, corrosive media, and aerospace. Among these applications, RF MEMS in wireless communications is a driving force which can be employed in the next generation of wireless integrated micro-systems. AlN has been identified as a suitable candidate for achieving the higher resonant frequencies because of the lower density and higher Young's modulus as compared to PZT and ZnO (which are most often been used).

ZnO and MgZnO alloys for UV Detectors

We have a strong interest in ZnO and MgZnO alloys because of their potential in UV detectors, UV LED's and lasers. ZnO and Mg _x Zn_1-xO have been subjects of intense scientific research as wide-band-gap optoelectronic materials. Their excellent material properties are promising for blue and UV photon emitters and detectors. ZnO and Mg_x Zn_1-xO also possess unique figures of merit, such as availability of lattice-matched single-crystal substrates ZnO and MgO for hexagonal and cubic Mg _x Zn_1-xO films, respectively, tunable band-gap energy (3.3 to 7.8 eV), and radiation hardness, which are crucial for practical optoelectronic devices.

In brief, Mg_xZn_1-xO film on c -plane sapphire with Mg composition, 37% has a hexagonal wurtzite crystal structure (h-MgZnO), shown in figure on left. Without phase separation, the maximum achievable band gap for h-MgZnO is 4.28 eV. Further increase of Mg in Mg_xZn_1-xO alloy led to mixing of hexagonal and cubic phases with undefined energy band gaps. Pure cubic-phase Mg_x Zn_1-xO appears when Mg composition exceeds 62%. MgZnO alloy system has distinct bandgap varying from 3.6 eV to 7.9 eV as shown in optical data on the right side. We have successfully fabricated MSM UV detectors for different Mg compositions.

Band gap energy found as a function of Mg content in ZnO

UV Visible Spectroscopy of MgZnO as a function of composition

Publications

•  Structural defects formed in Al-implanted and annealed 4H-SiC, Jones KA, Zheleva TS, Kulkarni VN, Ervin MH, Derenge MA, Vispute RD, SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 MATERIALS SCIENCE FORUM 457-460: 889-892, Part 1&2 2004.

•  Activation of implanted Al and co-implanted Al/C or Al/Si in 4H-SiC, Jones KA, Zheleva TS, Ervin MH, Shah PB, Derenge MA, Gerardi G, Freitas JA, Vispute RD, SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 MATERIALS SCIENCE FORUM 457-460: 929-932, Part 1&2 2004.

•  Deep-level transient spectroscopy study on double implanted n(+)-p and p(+)-n 4H-SiC diodes., Mitra S, Rao MV, Papanicolaou N, Jones KA, Derenge M, Holland OW, Vispute RD, Wilson SR., J. Appl. Phys., 95, 69-75 (2004).

•  Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method. Alam J, Bathe R, Vispute RD, Zavada JM, Litton CW, Iliadis AA, Mohammad SN, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22 (2): 624-629 MAR-APR 2004.

•  Electrical, CL, EPR and RBS study of annealed SiC implanted with Al or Al and C, Jones KA, Derenge MA, Ervin MH, Shah PB, Freitas JA, Vispute RD , Sharma RP, Gerardi GJ, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 (3): 486-496 FEB 2004.

•  The effect of microstructure on AlN MEMS resonator response. Wickenden AE, Currano LJ, Takacs T, Pulskamp J, Dubey M, Hullavarad S, Vispute RD., Integrated Ferroelectrics, 54, 565 (2003).

•  Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1-xO composition spreads. Takeuchi I, Yang W, Chang KS, Aronova MA, Venkatesan T, Vispute RD, Bendersky LA. J. Appl. Phys. 94, 7336 (2003).

•  “High voltage 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal”, Lin Zhu, Mayura Shanbhg, T. Paul Chow, K.A. Jones, M.E. Ervin, P.B. Shah, M.A. Derenge, R.D. Vispute , T. Venkatesan, A. Agarwal, IEEE Electron Device Letters (Accepted MS #1602).

•  “Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC”, L. B. Ruppalt, S. Stafford, D. Yuan, K. A. Jones, M. H. Ervin, K. W. Kirchner, T. S. Zheleva, M. C. Wood, B. R. Geil, E. Forsythe, R.D. Vispute , and T. Venkatesan. Solid-State Electronics, 47, 253 (2003).

•  "Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors" W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, and H. Shen, Appl. Phys. Lett. 82, 3424 (2003).

•  “ Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN ”, Abhishek Motayed, Ravi Bathe, Mark C. Wood, Ousmane S. Diouf, R. D. Vispute, and S. Noor Mohammad, J. Appl. Phys. 93, 1087 (2003).

•  “Growth of Highly Oriented AlN and ZnMgO films on Si (100) and (111) by Pulse Laser Deposition for MEMS Applications”, S.S.Hullavarad, R.D.Vispute, J.D.Yuan, V.N.Kulkarni, T.Venkatesan, A.E.Wickenden, Madan Dubey, Matt Ervin, K.Viehmann, Poster paper presented at Materials Research Society, Fall Meeting, December 2-6, 2002, Boston, MA (Paper ref. No.J5.34).

•  “Damage Recovery of Al Implanted 6H-SiC by Novel “Cap and Anneal” Process”, V.N.Kulkarni, S.S.Hullavarad, R.D.Vispute, J.A.Mcgee, S.R.Hermon, D.J.Wagstaffe, T.Venkatesan, K.A.Jones, M.H.Ervin, Poster paper presented at the Materials Research Society, Fall Meeting, December 2-6, 2002, Boston, MA. (Paper ref. No.K5.18).

•  “Implications of Growth Induced Defects on the Electrical and Mechanical Properties of AlN thin films on SiC”, Daniel Hebarsat, R.D.Vispute, S.S.Hullavarad, N.Reeves, B.Nagaraj, V.N.Kulkarni, T.Venkatesan, C.J.Scozie, Matt Ervin, A.Lelis, Poster paper presented at Materials Research Society, Fall Meeting, December 2-6, 2002, Boston, MA. (Paper ref. No.K5.25).

•  “Highly Textured AlN films on Pt/SiO2/Si structures by Pulse Laser Deposition for MEMS and NEMS Applications”, S.S.Hullavarad, R.D.Vispute, J.D.Yuan, V.N.Kulkarni, T.Venkatesan, A.E.Wickenden, Madan Dubey, Matt Ervin, K.Viehmann, (To be submitted in J. Appl. Phys).

•  ”A Comparison of Graphite and AlN Caps Used for Annealing Ion-Implanted SiC,” K. A. Jones, M. A. Derenge, P. B. Shah, T. S. Zheleva, M. H. Ervin, K. W. Kirchner, M. C. Wood, C. Thomas, M. G. Spencer, O. W. Holland and R. D. Vispute, Journal of Electronic Materials 31, 568, (2002).

•  “Ohmic metallization technology for wide band-gap semiconductors”, A. A. Iliadis, R. D. Vispute, T. Venkatesan and K. A. Jones, Thin Solid Films, 420, 478 (2002).

•  ”Observation of resonant tunneling action in ZnO/Zn 0.8 Mg 0.2 O devices”, Soumya Krishnamoorthy, Agis A. Iliadis, Aravind Inumpudi, Supab Choopun, Ratnakar D. Vispute and Tirumalai Venkatesan, Solid-State Electronics 46, 1633 (2002).

•  ”Pt–Ga Ohmic contacts to n-ZnO using focused ion beams”, A. Inumpudi, A. A. Iliadis, S. Krishnamoorthy, S. Choopun, R. D. Vispute and T. Venkatesan, Solid-State Electronics 46, 1665 (2002).

•  “Realization of cubic ZnMgO alloys above 5 eV by pulsed laser deposition”, Choopun, RD Vispute, Wei Yang, RP Sharma and T. Venkatesan, Appl. Phys. Lett. 80, 1529 (2002).

•  “Comparison of Al and Al/C Co-implants in 4H-SiC annealed with an AlN cap ”, Jones KA, Shah PB, Derenge MA, et al. MATER SCI FORUM 389-3: 819 (2002).

•  Zhu, M. Shanbhag, T.P. Chow, K.A. Jones, M.H. Ervin, R.D. Vispute , R.P. Sharma, T. Venkatesan, and A. Agarwal, European Conference on Silicon Carbide and Related Materials, Sept. 2002.

•  “AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques”, Ravi Bathe, R. D. Vispute, Dan Habersat, R. P. Sharma, T. Venkatesan, C. J. Scozzie, Matt Ervin, B. R. Geil, A. J. Lelis, S. J. Dikshit, and R. Bhattacharya, Thin Solid films 398, 575 (2001).

•  “Ultraviolet photoconductive detector based on epitaxial Mg 0.34 Zn 0.66 O thin films”. Yang W, Vispute RD, Choopun S, Sharma RP, Venkatesan T, Shen H., Appl. Phys. Letts., 78, 2787 (2001).

•  “Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH 3 ”, He MQ, Minus I, Zhou PZ, Mohammed SN, Halpern JB, Jacobs R, Sarney WL, Salamanca-Riba L, Vispute RD, Appl. Phys. Lett.. 77, 3731 (2000).

•  “Al, B, and Ga ion-implantation doping of SiC”, Handy EM, Rao MV, Holland OW, Chi PH, Jones KA, Derenge MA, Vispute RD, Venkatesan T, J. Elect. Materials 29 (11) 1340 (2000).

•  “The properties of annealed AlN films deposited by pulsed laser deposition”, Jones KA, Derenge MA, Zheleva TS, Kirchner KW, Ervin MH, Wood MC, Vispute RD, Sharma RP, Venkatesan T., J. Elect. Materials 29 (3) 262 (2000).

•  “TEM study of bulk AlN growth by physical vapor transport.”, Sarney WL, Salamanca-Riba L, Hossain T, Zhou P, Jayatirtha HN, Kang HH, Vispute RD, Spencer M, Jones KA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5, U329-U334, Suppl. 1 (2000).

•  S. Choopun, D. M. Chalk, W.Yang, R. D. Vispute, S. B. Ogale, R. P. Sharma, T. Venkatesan, Mat. Res. Soc. Symp. Proc. 623, 359 (2000).

•  “Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices”, Vispute RD, Patel A, Baynes K, Ming B, Sharma RP, Venkatesan T, Scozzie CJ, Lelis A, Zheleva T, Jones KA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5: U509-U514, Suppl. 1 (2000).

•  “Solid phase epitaxial recrystallization of AlN films on sapphire (0001): A novel substrate approach for GaN epitaxy”, R.D. Vispute , A. Patel, R.P. Sharma, T. Venkatesan, T. Zheleva, and K.A. Jones., Mat.. Res. Soc. Symp. Vol. 583, page. O 7.4.1 (2000).

•  “First observation of atomic long range ordering in metal-oxide based wide band gap heterostructures.”, R.D. Vispute , A. Patel, R.P. Sharma, T. Venkatesan, T. Zheleva, and K.A. Jones. Mat. Res. Soc. Symp. Vol. 583, page. O 7.4.1 (2000).

•  “Lateral Epitaxial Overgrowth and pendeo epitaxy of 3C-SiC on Si substrates”, Saddow SE, Carter GE, Geil B, Zheleva T, Melnychuck G, Okhuysen ME, Mazzola MS, Vispute RD, Derenge M, Ervin M, Jones KA, SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, MATERIALS SCIENCE FORUM, 338-3: 245 (2000).

•  “The effect of Ge on the structure & morphology of SiC films grown on (111) Si substrates”, Sarney WL, Salamanca-Riba L, Zhou P, Taylor C, Spencer MG, Vispute RD, Jones KA, SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 MATERIALS SCIENCE FORUM, 338-3, 277 (2000).

•  “Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C, Lelis AJ, Scozzie CJ, McLean FB, Geil BR”, Vispute RD, Venkatesan T., SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, MATERIALS SCIENCE FORUM 338-3, 1137 (2000).

•  "High-Temperature Dielectrics for SiC MOS-Controlled Devices, A. J. Lelis, C. J. Scozzie, F. B. McLean, B. R. Geil, R. D. Vispute, and T. Venkatesan, Proc. of Government Microelectronics Applications Conference (Anaheim, CA, March 2000).

•  “Lateral Epitaxial Overgrowth and pendeo epitaxy of 3C-SiC on Si substrates”, Saddow SE, Carter GE, Geil B, et al., MATER SCI FORUM 338, 245 (2000).

•  “Pulsed laser deposition: A novel growth technique for wide-bandgap semiconductor research,” Vispute RD, Enck R, Patel A, Ming B, Sharma RP, Venkatesan T, Scozzie CJ, Lelis A, McLean FB, Zheleva T, Jones KA, SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 MATERIALS SCIENCE FORUM 338-3: 1503-(2000).

•  “SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor”. Sarney WL, Salamanca-Riba L, Vispute RD , Zhou P, Taylor C, Spencer MG, Jones KA. J. Elect. Materials 29 (3): 359-363 MAR 2000.

•  “Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire,” Choopun S, Vispute RD, Noch W, Balsamo A, Sharma RP, Venkatesan T, Iliadis A, Look DC, Appl. Phys. Lett., 75 (25) 3947 (1999).

•  “Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C”, Scozzie CJ, Lelis AJ, McLean FB, Vispute RD, Choopun S, Patel A, Sharma RP, Venkatesan T. J. Appl. Phys. 86 (7): 4052 (1999).

•  “Annealing ion implanted SiC with an AlN cap”, Jones KA, Shah PB, Kirchner KW, Lareau RT, Wood MC, Ervin MH, Vispute RD, Sharma RP, Venkatesan T, Holland OW, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 61, 281 (1999).

•  “Effectiveness of AlN encapsulant in annealing ion-implanted SiC,” Handy EM, Rao MV, Jones KA, Derenge MA, Chi PH, Vispute RD, Venkatesan T, Papanicolaou NA, Mittereder, J. Appl. Phys. 86, 746 (1999).

•  “Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition,” Iliadis AA, Andronescu SN, Yang W, Vispute RD, Stanishevsky A, Orloff JH, Sharma RP, Venkatesan T, Wood MC, Jones KA, J. Elect. Mater. 28 (3) 136 (1999).

•  “Pulsed laser deposition and processing of wide band gap semiconductors and related materials,” Vispute R.D., Choopun S., Enck R., Patel A., Talyansky V., Sharma R.P., Venkatesan T, Sarney WL, Salamanca-Riba L, Andronescu SN, Iliadis A.A., Jones K.A., J. Elect. Mater. 28 (3) 275 (1999).

•  (Invited) “Pulsed laser deposition of wide band gap semiconductors: advances in deposition, etching and integration of novel devices” R. D. Vispute and T. Venkatesan, European Materials Research Society, Spring Meeting, , Strasbourg , ( France ) June 16-19, 1998 .

•  (Invited) “Advances in pulsed laser deposition of nitrides and their integration with oxides”, R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K.A. Jones, and A. A. Iliadis, Fourth International Conference on Laser Ablation, Monterey, CA, (USA), July 21-25, 1997; Applied Surface Sci. 127-129, 431 (1998).

•  Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices, R.D. Vispute, Talyansky, S. Choopun, R. P. Sharma, and T. Venkatesan, M. He, X. Tang, J.B. Halpern, and M.G. Spencer, Y.X. Li, and L.G. Salamanca-Riba, A. A. Iliadis, K.A. Jones, Appl. Phys. Lett. (In press. July 1998).

•  Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition, Iliadis AA, Andronescu SN, Edinger K, Orloff JH, Vispute RD, Talyansky V, Sharma RP, Venkatesan T, Wood MC, Jones KA, APPLIED PHYSICS LETTERS 73 (24): 3545-3547 DEC 14 1998.

•  AIN as an encapsulate for annealing SiC, Jones KA, Xie K, Eckart DW, Wood MC, Talyansky V, Vispute RD, Venkatesan T, Wongchotigul K, Spencer M, JOURNAL OF APPLIED PHYSICS, 83 (12): 8010-8015 JUN 15 1998.

•  Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices, Vispute RD, Talyansky V, Choopun S, Sharma RP, Venkatesan T, He M, Tang X, Halpern JB, Spencer MG, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA, APPLIED PHYSICS LETTERS 73 (3): 348-350 JUL 20 1998.

•  Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire, Talyansky V, Vispute RD, Ramesh R, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Wood MC, Lareau RT, Jones KA, Iliadis AA, THIN SOLID FILMS 323 (1-2): 37-41 JUN 22 1998.

•  Advances in pulsed laser deposition of nitrides and their integration with oxides
Vispute RD, Talyansky V, Sharma RP, Choopun S, Downes M, Venkatesan T, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA, McGarrity J., APPLIED SURFACE SCIENCE 129: 431-439 MAY 1998.

•  AlN deposited by OMVPE and PLD used as an encapsulate for ion implanted SiC
Jones KA, Xie K, Eckart DW, Wood MC, Talyansky V, Vispute RD, Venkatesan T, Wongchotigul K, Spencer MG, SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 MATERIALS SCIENCE FORUM 264-2: 1243-1246, Part 1-2 1998.

•  (Invited) “Pulsed laser deposition of wide band gap semiconductors: advances in deposition, etching and integration of novel devices”. R. D. Vispute and T. Venkatesan, European Materials Research Society, Spring Meeting, Strasbourg , ( France ), June 16-19 (1998).

•  (Invited) “Advances in pulsed laser deposition of nitrides and their integration with oxides”. R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K.A. Jones, and A. A. Iliadis, Fourth International Conference on Laser Ablation, Monterey, CA, (USA), July 21-25, 1997; Applied Surface Sci. 127-129, 431 (1998).

•  Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices. R. D. Vispute, Talyansky, S. Choopun, R. P. Sharma, and T. Venkatesan, M. He, X. Tang, J.B. Halpern, and M.G. Spencer, Y.X. Li, and L.G. Salamanca-Riba, A. A. Iliadis, K.A. Jones, Appl. Phys. Lett. (In press. July 1998).

•  AlN deposited by OMVPE and PLD used as an encapsulate for ion implanted SiC. Jones KA, Xie K, Eckart DW, Wood MC, Talyansky V, R.D. Vispute , Venkatesan T, Wongchotigul K, Spencer MG, SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, MATER SCI FORUM, 264-2: 1243-1246, Part 1-2 (1998).

•  Pulsed laser deposition of TiN films on sapphire. V. Talyansky, R.D. Vispute , R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, Y.X. Li, and L.G. Salamanca-Riba, A. A. Iliadis, K.A. Jones, and M.C. Wood , J. Mat. Res. (Accepted).

•  Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire. V. Talyansky, R.D. Vispute , R. Ramesh, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, Y.X. Li, and L.G. Salamanca-Riba, A. A. Iliadis, K.A. Jones, and M.C. Wood, Thin Solid Films (Accepted).

•  Pulsed laser deposition of titanium nitride films on sapphire (0001), V. Talyansky, R.D. Vispute , S. Chupoon, M. J. Downes, R. P. Sharma, T. Venkatesan, Y. X. Li, L. G. Salamanca-Riba, M. C. Wood, and K. A. Jones, MRS Conference Proceedings, 1997.

•  Study of electrical transport across interfaces between wide gap semiconductor and metal oxides, V. Talyansky, R. D. Vispute, R. P. Sharma, S. Chupoon, T. Venkatesan, A. A. Iliadis, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, 1997.

•  Pulsed laser deposition of GaN on sapphire, V. Talyansky, R. D. Vispute, R. P. Sharma, S. Chupoon , T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceeding 1997.

•  Pulses laser etching of GaN and AlN, H. Chen, R. D. Vispute, V. Talyansky, R. P. Sharma, S. Chupoon , T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  PLD epitaxial TiN contacts to SiC and GaN, V. Talyansky, R.D. Vispute , R. P. Sharma, S. Chupoon, T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  Pulsed laser deposition of highly crystalline GaN films on sapphire, R.D. Vispute , V. Talyansky, R. P. Sharma, S. Chupoon, T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  LD epitaxial TiN and Pt ohmic metallization of p-type 6H-SiC using focused ion beam surface modification, A.A. Iliadis, S.N. Andronescu, E. Edinger, J.H. Orloff, V. Talyansky, R.D. Vispute , R.P. sharma, T. Venkatesan, M.C. Wood, and K.A. Jones, MRS Conference Proceedings, Fall 1997.

•  (Invited) High quality optoelectronic grade epitaxial AlN films on Al 2 O 3 , Si and SiC by pulsed laser deposition. R.D. Vispute , and J. Narayan, International Conference on Metallurgical Coatings and Thin Films, American Vacuum Society, San Deigo, April 22-26, 1996, Thin Solid Films, 299, 94 (1997).

•  (Invited) Pulsed Laser Deposition of TiN on PMMA and Polyimide: A Novel Route for Plastic and Polymer Metallization. R.D. Vispute , J. Narayan, K. Jagannadham, "Metallization Aspects of Plastics and Polymers" Proc. Electrochemical Society, J. Elect. Chem. Soc. (In press).

•  Growth of epitaxial GaN films by pulsed laser deposition. R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K.A. Jones, A. A. Iliadis, M. Asif Khan, and J.W. Yang. Appl. Phys. Lett. 71, 102, 1997.

•  High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides. R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, T. Venkatesan, M.C. Wood, R. T. Lareau, K.A. Jones, and A. A. Iliadis, Appl. Phys. Lett. 70, 2735 (1997).

•  Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition. Kalyanaraman R, R.D. Vispute , Oktyabrsky S, Dovidenko K, Jagannadham K, Narayan J, Budai JD, Parikh N, Suvkhanov A, Appl. Phys. Lett. 71,1709 (1997).

•  Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition. Ding MQ, Myers AF, Choi WB, R.D. Vispute , Camphausen SM, Narayan J, Cuomo JJ, Hren JJ, Bruley J., J. VACUUM SCIENCE & TECHNOLOGY B, 15, 840-844 (1997).

•  Giant magnetoresistance and non-ohmic effects in La0.6Y0.07Ca0.33MnOx thin films. Kumar D, Kalyanaraman R, R.D. Vispute , Narayan J, Christen DK, Klabunde CE, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 45,122 (1997).

•  Studies on YBa2Cu4O8 thin films. Srinivas S, Bhatnagar AK, Ogale SB, R.D. Vispute , PHYSICA C, 275, 346-352 (1997).

•  Heteroepitaxial growth of ZnO films by PLD. R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, T. Venkatesan, M.C. Wood, R. T. Lareau, K.A. Jones, Y.X. Li, L and Salamanca-Riba, Mater. Res. Soc. Conference Proc. (Spring 1997).

•  Study of electrical transport across interfaces between wide gap semiconductor and metal oxides. V. Talyansky, R. D. Vispute, R. P. Sharma, S. Chupoon, T. Venkatesan, A. A. Iliadis, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, 1997.

•  Pulsed laser deposition of GaN on sapphire.V. Talyansky, R. D. Vispute, R. P. Sharma, S. Chupoon, T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceeding 1997.

•  Pulses laser etching of GaN and AlN. H. Chen, R. D. Vispute, V. Talyansky, R. P. Sharma, S. Chupoon , T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  PLD epitaxial TiN contacts to SiC and GaN. V. Talyansky, R.D. Vispute , R. P. Sharma, S. Chupoon, T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  Pulsed laser deposition of highly crystalline GaN films on sapphire. R.D. Vispute , V. Talyansky, R. P. Sharma, S. Chupoon , T. Venkatesan, M. C. Wood, R. T. Lareau, and K. A. Jones, MRS Conference Proceedings, Fall 1997.

•  PLD epitaxial TiN and Pt ohmic metallization of p-type 6H-SiC using focused ion beam surface modification. A.A. Iliadis, S.N. Andronescu, E. Edinger , J.H. Orloff, V. Talyansky, R.D. Vispute , R.P. Sharma, T. Venkatesan, M.C. Wood, and K.A. Jones, MRS Conference Proceedings, Fall (1997).

•  Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition, Kalyanaraman R, Vispute RD, Oktyabrsky S, Dovidenko K, Jagannadham K, Narayan J, Budai JD, Parikh N, Suvkhanov A APPLIED PHYSICS LETTERS, 71 (12): 1709-1711 SEP 22 1997.

•  Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition Ding MQ, Myers AF, Choi WB, Vispute RD , Camphausen SM, Narayan J, Cuomo JJ, Hren JJ, Bruley, J JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15 (4): 840-844 JUL-AUG 1997.

•  Growth of epitaxial GaN films by pulsed laser deposition, Vispute RD, Talyansky V, Sharma RP, Choopun S, Downes M, Venkatesan T, Jones KA, Iliadis AA, Khan MA, Yang JW, APPLIED PHYSICS LETTERS, 71 (1): 102-104 JUL 7 1997.

•  High quality optoelectronic grade epitaxial AlN films on alpha-Al2O3, Si and 6H-SiC by pulsed laser deposition, Vispute RD, Narayan J, Budai JD, THIN SOLID FILMS, 299 (1-2): 94-103 MAY 15 1997.

•  Giant magnetoresistance and non-ohmic effects in La0.6Y0.07Ca0.33MnOx thin films, Kumar D, Kalyanaraman R, Vispute RD, Narayan J, Christen DK, Klabunde CE, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED ECHNOLOGY, 45 (1-3): 122-125 MAR 1997.

•  High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides, Vispute RD, Talyansky V, Trajanovic Z, Choopun S, Downes M, Sharma RP, Venkatesan T, Woods MC, Lareau RT, Jones KA, Iliadis AA, APPLIED PHYSICS LETTERS, 70 (20): 2735-2737 MAY 19 1997.

•  Studies on YBa2Cu4O8 thin films, Srinivas S, Bhatnagar AK, Ogale SB, Vispute RD, PHYSICA C, 275 (3-4): 346-352 FEB 20 1997.

•  Growth of epitaxial GaN films by pulsed laser deposition. R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K.A. Jones, A. A. Iliadis, M. Asif Khan, and J.W. Yang. Appl. Phys. Lett. 71, 102, 1997.

•  High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides. R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, T. Venkatesan, M.C. Wood, R. T. Lareau, K.A. Jones, and A. A. Iliadis, Appl. Phys. Lett. 70, 2735 (1997).

•  Heteroepitaxial growth of ZnO films by PLD, R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, T. Venkatesan, M.C. Wood, R. T. Lareau, K.A. Jones, Y.X. Li, L and Salamanca-Riba, Mater. Res. Soc. Conference Proc. (Spring 1997).

•  Pulsed laser deposition of TiN, AlN and GaN films on sapphire. V. Talyansky, R.D. Vispute , R. Ramesh, R.P. Sharma, T. Venkatesan, Y.X. Li, L.G. Salmanca-Riba, M.C. Wood, and K.A. Jones, Proc. of Int. Conference on Fibre Optics and Photonics, Dec. 9-13, Madras, India, “Photonics-96”, page 815, (1996).

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